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| MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H q IC...................................................................400A q VCES ....................................................... 3300V q Insulated Type q 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 570.25 4 - M8 NUTS 20 C2 E1 C2 1240.25 140 40 E2 C1 G1 E1 E1 C2 G2 E2 CM C1 E2 E1 CIRCUIT DIAGRAM E2(C1) G1 G2 C2 6 - 7 MOUNTING HOLES 24.5 53.6 61.5 15 5.7 15 38 7.2 5 - M4 NUTS 36.3 48.8 18 39.5 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 28 5 30 LABEL MITSUBISHI HVIGBT MODULES CM400DY-66H . HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C, IGBT part Conditions Ratings 3300 20 400 800 400 800 3400 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1650V, IC = 400A, VGE = 15V VCC = 1650V, IC = 400A VGE1 = VGE2 = 15V RG = 7.5 Resistive load switching operation IE = 400A, VGE = 0V IE = 400A die / dt = -800A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Limits Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- 6.0 -- 4.40 4.80 40 4.0 1.2 1.9 -- -- -- -- 3.30 -- 100 -- -- 0.016 Max 5 7.5 0.5 5.72 -- -- -- -- -- 1.00 2.00 2.00 1.00 4.29 1.20 -- 0.036 0.072 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 800 Tj=25C 800 TRANSFER CHARACTERISTICS (TYPICAL) VCE=10V COLLECTOR CURRENT IC (A) 600 VGE=13V VGE=14V VGE=15V VGE=11V COLLECTOR CURRENT IC (A) VGE=12V 600 400 VGE=20V VGE=10V 400 200 VGE=9V VGE=8V VGE=7V 10 8 200 Tj = 25C Tj = 125C 0 0 2 4 6 0 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 10 Tj = 25C 6 8 IC = 800A IC = 400A 6 4 4 IC = 160A 2 Tj = 25C Tj = 125C 2 0 0 200 400 600 800 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 Tj=25C 102 7 5 3 2 101 7 5 3 2 Cies Coes 102 7 5 3 2 101 0 1 2 3 4 5 100 Cres 7 5 3 VGE = 0V, Tj = 25C 2 Cies, Coes : f = 100kHz : f = 1MHz Cres -1 10 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (s) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 101 7 5 Irr 3 2 100 7 5 trr 3 2 102 7 5 3 2 23 5 101 103 7 5 REVERSE RECOVERY CURRENT Irr (A) Feb. 2000 SWITCHING TIMES (s) VCC = 1650V, VGE = 15V 3 RG = 7.5, Tj = 125C 2 Inductive load 100 7 5 3 2 10-1 7 5 td(off) td(on) tr tf 5 7 102 23 5 7 103 23 5 10-1 3 VCC = 1650V, Tj = 125C 2 Inductive load VGE = 15V, RG = 7.5 5 7 102 23 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) Single Pulse TC = 25C Rth(j - c) = 0.072C/W (Per 1/2 module) 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 Single Pulse TC = 25C Rth(j - c) = 0.036C/W (Per 1/2 module) 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 1650V IC = 400A 16 12 8 4 0 0 1000 2000 3000 4000 GATE CHARGE QG (nC) |
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